SILICON CARBIDE EPITAXIAL WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE
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United States of America Patent
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Oct 31, 2019
app pub date -
Dec 19, 2018
filing date -
Apr 26, 2018
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Abstract
A high quality silicon carbide epitaxial wafer using a p-type silicon carbide single crystal substrate of low resistivity. The silicon carbide epitaxial wafer includes a p-type 4H—SiC single crystal substrate that has a first main surface having an off angle with respect to (0001) plane, and has a resistivity of less than 0.4 Ωcm, and a silicon carbide epitaxial layer that is disposed on the first main surface of the p-type 4H—SiC single crystal substrate, in which an off direction of the off angle is the <01-10> direction.
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