QUANTUM CONFINED NANOSTRUCTURES WITH IMPROVED HOMOGENEITY AND METHODS FOR MAKING THE SAME
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United States of America Patent
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Issued Date -
Nov 7, 2019
app pub date -
May 3, 2018
filing date -
May 3, 2018
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Abstract
A method that includes: providing a substrate including a layer of a crystalline material having a first surface; and exposing the first surface to an environment under conditions sufficient to cause epitaxial growth of a layer of a deposition material on the first surface, wherein exposing the first surface to the environment includes illuminating the substrate with light at a first wavelength while causing the epitaxial growth of the layer of the deposition material. The first surface includes one or more discrete growth sites at which an epitaxial growth rate of the quantum confined nanostructure material is larger than areas of the first surface away from the growth sites by an amount sufficient so that the deposition material forms a quantum confined nanostructure at each of the one or more discrete growth sites.
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