CHEMICAL MECHANICAL POLISHING SLURRY AND CHEMICAL MECHANICAL POLISHING PROCESS USING THE SAME

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United States of America

SERIAL NO

15988445

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Abstract

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The present disclosure provides a chemical mechanical polishing (CMP) slurry including a Lewis acid which is in dissolved form, and a chemical mechanical polishing (CMP) process using such CMP slurry. The present disclosure further provides an abrasive-free chemical mechanical polishing (CMP) slurry including a Lewis acid which is in dissolved form.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LIANG, WEI-WEI HSINCHU, TW 9 2

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