METHOD AND APPARATUS TO IMPROVE WRITE BANDWIDTH OF A BLOCK-BASED MULTI-LEVEL CELL NON-VOLATILE MEMORY
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United States of America
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Aug 6, 2019
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Aug 6, 2019
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Write performance of a block-based multi-level cell non-volatile memory is increased through the use of an internal copy of blocks with a high validity. Write (program) performance for sequential workloads is increased by moving the data in blocks with a high validity within a NAND device directly from the portion of the NAND device configured as single level cell NAND to the portion of the NAND device configured as multi-level cell NAND.
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