Strain Tuning Individual Quantum Dot Emission Frequencies with Local Phase Transitions

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United States of America

SERIAL NO

16421778

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Abstract

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A technique is described to deterministically tune the emission frequency of individual semiconductor photon sources, for example quantum dots. A focused laser is directed at a film of material that changes form when heated (for example, a phase change material that undergoes change between crystal and amorphous forms) overlaid on a photonic membrane that includes the photon sources. The laser causes a localized change in form in the film, resulting in a change in emission frequency of a photon source.

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Patent Owner(s)

Patent OwnerAddress
THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVYONE LIBERTY CTR 875 NORTH RANDOLPH ST SUITE 1425 CHIEF OF NAVAL RESEARCH OFFICE OF COUNSEL (ATTN CODE OOCCIP) ARLINGTON VA 22203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bracker, Allan S Alexandria, US 4 2
Carter, Samuel Waldorf, US 4 2
Gammon, Daniel Waldorf, US 4 2
Grim, Joel Q Washington, US 2 0

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