ELECTRO-OPTICALLY ACTIVE DEVICE

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United States of America

SERIAL NO

16463337

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Abstract

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A silicon based electro-optically active device and method of production thereof. The device comprising: a silicon-on-insulator (SOI) layer; an electro-optically active stack, disposed on top of the SOI layer: a first epitaxially grown structure comprising a first passive waveguide and a second epitaxially grown structure comprising a second passive waveguide, the first and second passive waveguides being disposed adjacent to respective sides of the electro-optically active stack, wherein the first and second passive waveguides are configured to edge couple light from the first passive waveguide into the electro-optically active stack and from the electro-optically active stack into the second passive waveguide; and an evanescent coupling structure, for evanescently coupling light between the SOI layer and the first and second passive waveguides.

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Patent Owner(s)

Patent OwnerAddress
ROCKLEY PHOTONICS LIMITEDCLARENDON BUSINESS CENTRE BELSYRE COURT 57 WOODSTOCK ROAD OXFORD OX2 6HJ

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
YU, Guomin Glendora, US 39 61
ZILKIE, Aaron Pasadena, US 19 39

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