METHODS FOR FABRICATING AND ETCHING POROUS SILICON CARBIDE STRUCTURES
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United States of America
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Jan 2, 2020
app pub date -
Jun 6, 2019
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Jun 6, 2019
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Abstract
The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.
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