Extreme Ultraviolet Mask Blank Defect Reduction
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United States of America
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Issued Date -
Jan 9, 2020
app pub date -
Jul 3, 2019
filing date -
Jul 3, 2019
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Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.
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