PHOTORESIST REMOVAL METHOD USING RESIDUE GAS ANALYZER

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United States of America

APP PUB NO 20200016635A1
SERIAL NO

16503571

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Abstract

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A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Chin-Wen Hsinchu City, TW 11 176
CHEN, Ya-Ping Hsinchu City, TW 23 62
HSIAO, Chun-Jen Hsinchu City, TW 2 0
LIN, Chien-Hung Hsinchu City, TW 158 802
LIU, Wen-Pin Hsinchu County, TW 14 61

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