MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
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United States of America
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Jan 16, 2020
app pub date -
Apr 4, 2017
filing date -
Apr 4, 2017
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Abstract
A silicon carbide substrate (2) is positioned such that a principal surface of the silicon carbide substrate (2) is parallel to a plurality of injection holes (8) of a horizontal CVD apparatus arranged in a row. Source gas is fed from the plurality of injection holes (8) to epitaxially grow a silicon carbide epitaxial growth layer (10) on the principal surface of the silicon carbide substrate (2). The source gas fed from the plurality of injection holes (8) is divided into a plurality of system lines and controlled individually by separate mass flow controllers. A flow rate of the source gas on the principal surface of the silicon carbide substrate (2) is greater than 1 m/sec.
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