TWO-TRANSISTOR BANDGAP REFERENCE CIRCUIT AND FINFET DEVICE SUITED FOR SAME

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200019201A1
SERIAL NO

16578361

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Abstract

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Some embodiments relate to a device disposed on a semiconductor substrate. The semiconductor substrate includes a base region and a crown structure extending upwardly from the base region. The crown structure is narrower than the base region. A plurality of fins extend upwardly from an upper surface of the crown structure. A gate dielectric material is disposed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode is disposed along sidewall portions of the gate dielectric material. An uppermost surface of the conductive electrode resides below the upper surfaces of the plurality of fins.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-77 R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Peter Pleasanton, US 50 910
Lin, Da-Wen Hsinchu City, TW 75 1812
Lin, Yvonne Saratoga, US 26 232
Rousseau, Paul Sunnyvale, US 5 30
Yang, Sheng-Jier Zhubei City, TW 16 219

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