TWO-TRANSISTOR BANDGAP REFERENCE CIRCUIT AND FINFET DEVICE SUITED FOR SAME
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United States of America
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Jan 16, 2020
app pub date -
Sep 22, 2019
filing date -
Sep 22, 2019
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Abstract
Some embodiments relate to a device disposed on a semiconductor substrate. The semiconductor substrate includes a base region and a crown structure extending upwardly from the base region. The crown structure is narrower than the base region. A plurality of fins extend upwardly from an upper surface of the crown structure. A gate dielectric material is disposed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode is disposed along sidewall portions of the gate dielectric material. An uppermost surface of the conductive electrode resides below the upper surfaces of the plurality of fins.
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