TWO-TRANSISTOR BANDGAP REFERENCE CIRCUIT AND FINFET DEVICE SUITED FOR SAME

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United States of America

APP PUB NO 20200019201A1
SERIAL NO

16578361

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Abstract

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Some embodiments relate to a device disposed on a semiconductor substrate. The semiconductor substrate includes a base region and a crown structure extending upwardly from the base region. The crown structure is narrower than the base region. A plurality of fins extend upwardly from an upper surface of the crown structure. A gate dielectric material is disposed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode is disposed along sidewall portions of the gate dielectric material. An uppermost surface of the conductive electrode resides below the upper surfaces of the plurality of fins.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Peter Pleasanton, US 42 723
Lin, Da-Wen Hsinchu City, TW 51 1094
Lin, Yvonne Saratoga, US 26 178
Rousseau, Paul Sunnyvale, US 5 24
Yang, Sheng-Jier Zhubei City, TW 11 193

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