INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200019671A1
SERIAL NO

16460439

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Abstract

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An integrated circuit includes a first set of devices, a set of metal layers and a header circuit. The first set of devices are configured to operate on a first supply voltage, and are located on a first layer of the integrated circuit. The set of metal layers are above the first layer, and includes a first metal layer and a second metal layer. The first metal layer extends in at least a first direction and a second direction. The header circuit is above the first set of devices. At least a portion of the header circuit is positioned between the first metal layer and the second metal layer. The header circuit is configured to provide the first supply voltage to the first set of devices, and is configured to be coupled to a second voltage supply having a second supply voltage different from the first supply voltage.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD VI HSINCHU SCIENCE PARK HSINCHU 300

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LIN, Chin-Shen Taipei City, TW 55 110
LIN, John Hsinchu, TW 113 1271
WANG, Chung-Hsing Baoshan Township, TW 213 1245
YANG, Kuo-Nan Hsinchu City, TW 131 870

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