Semiconductor Devices and Methods of Making the Same
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United States of America
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Jan 16, 2020
app pub date -
Jun 11, 2019
filing date -
Jun 11, 2019
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Abstract
An exemplary method of making a semiconductor device includes providing a semiconductor layer of a first conductivity type, providing a first hard mask on a surface of the semiconductor layer, patterning the first hard mask to obtain a patterned first hard mask to obtain an exposed surface of the semiconductor layer, forming a body region in the semiconductor layer by using the patterned first hard mask as mask, the body region being of a second conductivity type different from the first conductivity type, providing a second hard mask on the patterned first hard mask and the exposed surface of the semiconductor layer, patterning the second hard mask to obtain a patterned second hard mask, and forming a contact region and a sinker region by using the patterned first hard mask and the patterned second hard mask as mask.
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