RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFORMANCE, STABILITY, AND MANUFACTURABILITY
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United States of America
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Jan 16, 2020
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Jul 11, 2019
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Jul 11, 2019
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Abstract
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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