EPITAXIAL SILICON WAFER
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United States of America
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Jan 16, 2020
app pub date -
Sep 26, 2019
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Sep 26, 2019
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Abstract
A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm3) and an initial oxygen concentration X (×1017 atoms/cm3) satisfy the expression X≤−4.3×10−19Y+16.3.
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