NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200021083A1
SERIAL NO

16584173

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Abstract

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In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

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Patent OwnerAddress
NUVOTON TECHNOLOGY CORPORATION JAPAN1 KOTARI-YAKEMACHI NAGAOKAKYO CITY KYOTO 6178520 ?6178520

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IKEDA, Daisuke Toyama, JP 74 420
KAWASAKI, Satoko Osaka, JP 3 5
KITAGAWA, Hideo Toyama, JP 39 325
ONO, Masayuki Toyama, JP 121 727
SAMONJI, Katsuya Toyama, JP 15 32
SHIMIZU, Gen Toyama, JP 9 16
TAKAYAMA, Toru Toyama, JP 530 27252
TOMITA, Osamu Osaka, JP 24 316

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