ETCHANT COMPOSITION FOR ETCHING TITANIUM LAYER OR TITANIUM-CONTAINING LAYER, AND ETCHING METHOD
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United States of America
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Jan 23, 2020
app pub date -
Mar 30, 2018
filing date -
Mar 30, 2018
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Abstract
Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11.
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