METHOD OF FABRICATING AN INTEGRATED CIRCUIT WITH A PATTERN DENSITY-OUTLIER-TREATMENT FOR OPTIMIZED PATTERN DENSITY UNIFORMITY

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200027699A1
SERIAL NO

16587006

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Abstract

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The present disclosure provides one embodiment of an IC method. First pattern densities (PDs) of a plurality of templates of an IC design layout are received. Then a high PD outlier template and a low PD outlier template from the plurality of templates are identified. The high PD outlier template is split into multiple subsets of template and each subset of template carries a portion of PD of the high PD outlier template. A PD uniformity (PDU) optimization is performed to the low PD outlier template and multiple individual exposure processes are applied by using respective subset of templates.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Cheng-Hung Hsinchu County, TW 129 363
LIN, Burn Jeng Hsinchu City, TW 122 3088
LIN, Jyuh-Fuh Miaoli County, TW 11 83
LIN, Shy-Jay Hsinchu County, TW 129 852
LIU, Pei-Yi Changhua County, TW 30 234
WANG, Wen-Chuan Hsinchu City, TW 71 471

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