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Abstract

A method for cleaning a semiconductor wafer, including: inserting a semiconductor wafer into a hydrofluoric acid tank filled with hydrofluoric acid to immerse the semiconductor wafer in the hydrofluoric acid; pulling out the semiconductor wafer from the hydrofluoric acid tank; and then inserting the semiconductor wafer into an ozone water tank filled with ozone water to immerse the semiconductor wafer in the ozone water for cleaning. The semiconductor wafer is inserted into the ozone water tank at a rate of 20000 mm/min or more at least after a lower end of the semiconductor wafer comes into contact with the ozone water until the semiconductor wafer is completely immersed in the ozone water. A method for cleaning a semiconductor wafer which can prevent and remove contaminant from re-adhering in a method in which a semiconductor wafer is cleaned by immersion in hydrofluoric acid and then cleaned by immersion in ozone water.

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First Claim