FILM FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America
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Jan 23, 2020
app pub date -
Jul 16, 2019
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Jul 16, 2019
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Abstract
A film forming method of forming an oxide film on a substrate, wherein the oxide film has germanium doped therein and comprises a property of a conductor or a semiconductor, is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein an oxide film material including a constituent element of the oxide film and an organic germanium compound may be dissolved in the solution.
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