TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200027965A1
SERIAL NO

16509395

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over the top of the fin and laterally adjacent the sidewalls of the fin. A gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin. First and second semiconductor source or drain regions are adjacent the first and second sides of the gate electrode, respectively. First and second trench contact structures are over the first and second semiconductor source or drain regions, respectively, the first and second trench contact structures both comprising a U-shaped metal layer and a T-shaped metal layer on and over the entirety of the U-shaped metal layer.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HATTENDORF, Michael L Portland, US 50 479
JOSHI, Subhash M Hillsboro, US 37 824
LEIB, Jeffrey S Beaverton, US 13 4

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