UNIFORM BOTTOM SPACER FOR VFET DEVICES

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200027983A1
SERIAL NO

16039472

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Abstract

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Vertical field effect transistor (VFET) structures and methods of fabrication include a bottom spacer having a uniform thickness. The bottom spacer includes a bilayer portion including a first layer formed of an oxide, for example, and a second layer formed of a nitride, for example, on the first layer, and a monolayer portion of a fourth layer of a nitride for example, immediately adjacent to and intermediate the fin and the bilayer portion.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bentley, Steven Albany, US 62 193
Chi, Cheng Jersey City, US 50 37
Park, Chanro Saratoga, US 153 603
Xie, Ruilong Schenectady, US 685 3641
Yamashita, Tenko Schenectady, US 530 2400

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