Method of Semiconductor Device Fabrication
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United States of America
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Issued Date -
Feb 6, 2020
app pub date -
Oct 14, 2019
filing date -
Oct 14, 2019
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a hard mask (HM) layer over the dielectric layer, forming a fin trench through the HM layer and the dielectric layer and extending down to the substrate, forming a semiconductor feature in the fin trench and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features.
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