SUBSTRATE INTEGRATED WAVEGUIDE AND METHOD FOR MANUFACTURING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200044303A1
SERIAL NO

16050991

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for manufacturing a substrate integrated waveguide for a millimeter wave signal is disclosed. In the method, a gold layer is disposed on a top surface of the silicon substrate using a lift-off process. Next, two parallel rows of substantially equal spaced vias are formed in the silicon substrate using a through-silicon-via etching process. Then, a copper layer is disposed on the bottom side of the silicon substrate and on interior surfaces of each via. The separation between the copper layer and the gold layer define a height of the substrate integrated waveguide, while the separation between the two parallel rows of substantially equal spaced vias define a width of the substrate integrated waveguide. In some implementations the length of the substrate defines a length of the substrate integrated waveguide, and the length, width, and height define a resonator that is resonant at a millimeter wave frequency.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC5701 N PIMA ROAD SCOTTSDALE AS 85250

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SHIN, Kiryung Chandler, US 2 3

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