CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION
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United States of America
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Feb 13, 2020
app pub date -
Feb 22, 2018
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Feb 22, 2018
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Abstract
The present invention relates to a chemical mechanical polishing slurry composition, and more specifically, to a chemical mechanical polishing slurry composition that can polish an insulating film such as a silicon nitride film or a metal film such as tungsten alone or simultaneously, and particularly, can easily control the polishing speed, and thus minimize an interlayer step difference of a semiconductor device by using a compound having a phosphate group as an agent for controlling polishing selectivity, and selectively using a tertiary amine compound together with the agent for controlling polishing selectivity, and a method for polishing a semiconductor substrate using the same.
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