EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER
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United States of America
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Feb 13, 2020
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Sep 12, 2017
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Sep 12, 2017
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Abstract
A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film formation step for forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and a nitrogen-concentration setting step for setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film through the epitaxial-film formation step to a heat treatment in a nitrogen atmosphere.
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