LOGIC SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America
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Feb 20, 2020
app pub date -
Apr 23, 2019
filing date -
Apr 23, 2019
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Abstract
Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.
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