MEMS ISOLATION STRUCTURES

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200055728A1
SERIAL NO

16550129

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

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Patent Owner(s)

Patent OwnerAddress
DIGITALOPTICS CORPORATION MEMSSAN JOSE CA 95134

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Calvet, Robert J Pasadena, US 66 1443
Gutierrez, Roman C Arcadia, US 136 2525
Jain, Ankur Cerritos, US 142 1947
Lee, Shi-Sheng Arcadia, US 7 56
Liu, Xiaolei South Pasadena, US 112 509

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