DIELECTRIC LAYER, INTERCONNECTION STRUCTURE USING THE SAME, AND MANUFACTURING METHOD THEREOF

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United States of America

APP PUB NO 20200058495A1
SERIAL NO

16103744

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Abstract

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A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Che-Lun Kaohsiung City, TW 23 48
CHOU, You-Hua Hsinchu City, TW 115 1012
HO, Yi-Chen Taichung City, TW 14 13
LIAO, Yen-Hao New Taipei City, TW 2 1
WU, Zhen-Cheng Taichung City, TW 62 665

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