TONE REVERSAL DURING EUV PATTERN TRANSFER USING SURFACE ACTIVE LAYER ASSISTED SELECTIVE DEPOSITION
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United States of America
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Issued Date -
Feb 20, 2020
app pub date -
Aug 17, 2018
filing date -
Aug 17, 2018
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Abstract
A method of manufacturing a semiconductor device includes forming a hard mask layer over a substrate and activating a surface of the hard mask layer to form a surface active layer over the hard mask layer. A resist layer is formed over the hard mask layer and a metal-containing layer is selectively formed over the surface active layer in at least one trench defined between portions of the resist layer. The resist layer is removed to define a pattern between portions of the selectively formed metal-containing layer and the hard mask layer is etched in accordance with the pattern. The etched pattern is transferred to at least a portion of the substrate and at least a portion of the hard mask layer, surface active layer, and metal-containing layer are removed.
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