METHODS FOR FORMING AND ETCHING STRUCTURES FOR PATTERNING PROCESSES
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United States of America
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Issued Date -
Feb 20, 2020
app pub date -
Jul 24, 2019
filing date -
Jul 24, 2019
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Abstract
Embodiments of the present disclosure provide methods and apparatus for forming and patterning a spacer layer for multi-patterning processes. In one embodiment, a method for patterning a spacer layer on a substrate includes forming a protective layer on a spacer layer disposed on a structure disposed on a substrate, wherein the protective layer is formed predominately on a top surface of the spacer layer, than a bottom surface of the spacer layer, etching the spacer layer from the bottom surface, forming a polymer layer on the substrate, etching a top portion of the polymer layer and a first portion the spacer layer located the top surface of the structure, and removing the structure from the substrate and leaving a second portion the spacer layer on the substrate.
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