ANTIFERROMAGNET FIELD-EFFECT BASED LOGIC CIRCUITS INCLUDING SPIN ORBITAL COUPLING CHANNELS WITH OPPOSING PREFERRED CURRENT PATHS AND RELATED STRUCTURES

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200058795A1
SERIAL NO

16541564

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Abstract

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An anti-ferromagnetic (AFM) voltage-controlled field effect logic device structure can include an AFM material that extends in a first direction and an input voltage terminal that extends opposite the AFM material. An oxide material can be located between the AFM material and the input voltage terminal. A first spin orbital coupling (SOC) material can extend in a second direction across the AFM material to provide a first SOC channel with a drain voltage terminal at a first end of the first SOC channel and an output voltage terminal at a second end of the first SOC channel that is opposite the first end. A contact can be electrically coupled to the output voltage terminal and configured to electrically couple to a second SOC material extending in the second direction spaced apart from the first SOC material to provide a second SOC channel.

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Patent Owner(s)

Patent OwnerAddress
GEORGIA TECH RESEARCH CORPORATION926 DALNEY STREET NW ATLANTA GA 30318

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Naeemi, Azad Atlanta, US 7 15
Pan, Chenyun Arlington, US 4 11

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