MAGNETORESISTANCE EFFECT DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20200058802A1
SERIAL NO

16485850

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A magnetoresistance effect device includes a magnetoresistance effect element, and an external magnetic field application unit for applying an external magnetic field to the magnetoresistance effect element. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The external magnetic field application unit includes a magnetization retention section and a magnetization setting section. The magnetization setting section has a function of setting a magnetization to be used to generate the external magnetic field into the magnetization retention section by applying a magnetization-setting magnetic field to the magnetization retention section and then stopping the application of the magnetization-setting magnetic field. The magnetization retention section has a function of retaining the set magnetization after the application of the magnetization-setting magnetic field is stopped.

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Patent Owner(s)

Patent OwnerAddress
TDK CORPORATIONTOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HARA, Shinji Tokyo, JP 129 1536
ITO, Kuniyasu Tokyo, JP 15 125

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