Quantum Metrology and Quantum Memory Using Defect Sates with Spin -3/2 or Higher Half-Spin Multiplets
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United States of America
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Mar 26, 2020
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Nov 15, 2019
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Nov 15, 2019
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Abstract
Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi− monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi− monovacancy defect in silicon carbide.
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