Integrated assemblies which include non-conductive-semiconductor-material and conductive-semiconductor-material, and methods of forming integrated assemblies
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United States of America Patent
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Nov 3, 2020
Grant Date -
Apr 2, 2020
app pub date -
Dec 4, 2019
filing date -
Jul 19, 2018
priority date (Note) -
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Abstract
A method of forming an integrated assembly includes providing a construction having laterally-spaced digit-line-contact-regions and having intervening regions between the laterally-spaced digit-line-contact-regions; forming an expanse of non-conductive-semiconductor-material which extends across the digit-line-contact-regions and the intervening regions; a lower surface of the non-conductive-semiconductor-material being vertically-spaced from upper surfaces of the digit-line-contact-regions; forming openings extending through the non-conductive-semiconductor-material to the digit-line-contact-regions; forming conductive-semiconductor-material-interconnects within the openings and coupled with the digit-line-contact-regions, upper surfaces of the conductive-semiconductor-material-interconnects being beneath the lower surface of the non-conductive-semiconductor-material; and forming metal-containing-digit-lines over the non-conductive-semiconductor-material.
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