Technique to lower switching power of bit-lines by adiabatic charging of SRAM memories

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United States of America Patent

PATENT NO 10720193
APP PUB NO 20200105321A1
SERIAL NO

16147454

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Abstract

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A system and method for efficiently managing switching power of bit lines. In various embodiments, a first bit line in a memory array is pre-charged in multiple discrete steps, rather than in one continuous step. For a read operation that completed and read a logic low level from a first storage node, the first bit line is pre-charged from a ground reference level to a first power supply voltage. Similarly, a second bit line corresponding to a second storage node storing an inverse voltage level of the first storage node is pre-charged from a larger second power supply voltage to the smaller first power supply voltage. When the first time interval has elapsed, the first and second bit lines are pre-charged from the first power supply voltage to the second power supply voltage during a second time interval. Discrete steps are also used for pre-charging after write operations.

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Patent Owner(s)

Patent OwnerAddress
APPLE INCONE APPLE PARK WAY CUPERTINO CA 95014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abu-Rahma, Mohamed H Mountain View, US 19 73
Sinangil, Yildiz Sunnyvale, US 7 14

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