Wet Atomic Layer Etching Using Self-Limiting and Solubility-Limited Reactions
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United States of America Patent
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Issued Date -
May 21, 2020
app pub date -
Feb 27, 2019
filing date -
Nov 15, 2018
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Abstract
A method for improving both the microscopic and macroscopic uniformity of materials during etching is disclosed herein. These improvements may be accomplished through the formation and dissolution of thin, self-limiting layers on the material surface by the use of wet atomic layer etching (ALE) techniques. For etching of polycrystalline materials, these self-limiting reactions can be used to prevent this roughening of the surface during etching. Thus, as disclosed herein, a wet ALE process uses sequential, self-limiting reactions to first modify the surface layer of a material and then selectively remove the modified layer.
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