ETCHING SOLUTION, METHOD FOR PROCESSING OBJECT TO BE PROCESSED, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
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United States of America Patent
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Jun 18, 2020
app pub date -
Dec 9, 2019
filing date -
Dec 18, 2018
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Abstract
A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.
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