GE-DOPED AUSN SOLDER ALLOYS

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United States of America Patent

APP PUB NO 20210047710A1
SERIAL NO

16542910

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Implementations of the disclosure are directed to improving the ductility of a tin-enriched AuSn solder alloy by doping the solder alloy with Germanium (Ge). The final AuSnGe alloy may consist of 75 to 80 wt % Au, 20 to 25 wt % Sn, and 0.05 to 1.5 wt % Ge.

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Patent Owner(s)

Patent OwnerAddress
INDIUM CORPORATION34 ROBINSON ROAD CLINTON NY 20876

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Reid, Brian Norwich, US 18 149
Salvatore, Carmen Whitesboro, US 1 0
Testa, Christopher Utica, US 8 31
Wu, Joseph C Utica, US 20 96

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