Method of in-situ TEM nanoindentation for damaged layer of silicon

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United States of America Patent

PATENT NO 11099110
APP PUB NO 20210080361A1
SERIAL NO

16761345

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Abstract

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A method of in-situ TEM nanoindentation for a damaged layer of silicon is disclosed. Wet etching and ion beam lithography are used for preparing a silicon wedge sample. An etched silicon wedge is thinned and trimmed by a focused ion beam; thinning uses ion beam of 30 kV: 50-80 nA, and trimming uses ion beam of 5 kV: 1-6 pA; and the top width of the silicon wedge is 80-100 nm. The sample is fixed on a sample holder of an in-situ TEM nanomechanical system by using a conductive silver adhesive. The sample is indented with a tip in the TEM, so that the thickness of the damaged layer of the sample is 2-200 nm; and an in-situ nanoindentation experiment is conducted on the damaged layer of the sample in the TEM.

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Patent Owner(s)

Patent OwnerAddress
DALIAN UNIVERSITY OF TECHNOLOGYDALIAN LIAONING 116024

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cui, Junfeng Liaoning, CN 8 2
Liu, Dongdong Liaoning, CN 32 637
Zhang, Zhenyu Liaoning, CN 183 901

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