CMP SLURRY COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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May 6, 2021
app pub date -
Jun 25, 2020
filing date -
Oct 30, 2019
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Abstract
Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.
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