Wafer level ultrasonic device and manufacturing method thereof

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United States of America Patent

PATENT NO 11806751
APP PUB NO 20210170448A1
SERIAL NO

16875525

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Abstract

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A wafer level ultrasonic device includes a composite layer, a first conductive layer, a second conductive layer, a base, a first electrical connection region, and a second electrical connection region. The composite layer includes an ultrasonic element and a protective layer. The ultrasonic element includes a first electrode and a second electrode. The protective layer has a first connecting channel and a second connecting channel respectively corresponding to the first electrode and the second electrode. The first conductive layer and the second conductive layer are respectively in the first connecting channel and the second connecting channel to connect the first electrode and the second electrode. The base includes an opening forming a closed cavity with the protective layer. The first electrical connection region and the second electrical connection region are respectively filled with metal materials to electrically connect the first conductive layer and the second conductive layer.

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Patent Owner(s)

Patent OwnerAddress
SONICMEMS (ZHENGZHOU) TECHNOLOGY CO LTDROOM 301 BUILDING 5 NO 32 WUTONG STREET ZHENGZHOU HI-TECH INDUSTRIAL DEVELOPMENT ZONE ZHENGZHOU 450001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiu, Yi-Hsiang Taipei, TW 20 31
Lee, Hung-Ping Taipei, TW 12 36

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