Dual-Port Semiconductor Memory and First In First Out (FIFO) Memory Having Electrically Floating Body Transistor

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United States of America Patent

APP PUB NO 20210327880A1
SERIAL NO

17363291

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Abstract

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Multi-port semiconductor memory cells including a common floating body region configured to be charged to a level indicative of a memory state of the memory cell. The multi-port semiconductor memory cells include a plurality of gates and conductive regions interfacing with said floating body region. Arrays of memory cells and method of operating said memory arrays are disclosed for making a memory device.

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Patent Owner(s)

Patent OwnerAddress
ZENO SEMICONDUCTOR INC830 STEWART DRIVE #104 SUNNYVALE CA 94085

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Widjaja, Yuniarto Cupertino, US 265 29705

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