ETCHANT FOR SELECTIVELY ETCHING COPPER AND COPPER ALLOY, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE USING SAID ETCHANT
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United States of America
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Issued Date -
Dec 9, 2021
app pub date -
Nov 19, 2019
filing date -
Nov 19, 2019
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Abstract
The present invention relates to an etchant capable of selectively etching copper and a copper alloy while suppressing dissolution of nickel, tin, gold, and an alloy thereof. This etchant is characterized by comprising: (A) 5-10.5% by mass of hydrogen peroxide with respect to the total mass of the etchant; (B) 0.3-6% by mass of nitric acid with respect to the total mass of the etchant; (C) at least one nitrogen-containing 5-membered ring compound selected from the group consisting of triazoles and tetrazoles, which may have at least one substituent selected from the group consisting of a C1-6 alkyl group, an amino group, and a substituted amino group having a substituent selected from the group consisting of a C1-6 alkyl group and a phenyl group; and (D) (d1) one or more pH adjusters selected from the group consisting of an alkali metal hydroxide, ammonia, an amine, and an ammonium salt, (d2) a phosphonic acid compound, or (d3) a combination of (d1) and (d2).
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