METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Feb 10, 2022
app pub date -
Aug 8, 2019
filing date -
Aug 8, 2019
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
In a step of calculating formation conditions for the second silicon carbide layer, a formation time of the second silicon carbide layer is calculated as a value obtained by multiplying a value obtained by dividing the second thickness by the first thickness, by the first formation time, and a flow rate of a second ammonia gas in a step of forming the second silicon carbide layer by epitaxial growth is calculated as a value obtained by multiplying a value obtained by dividing the second concentration by the first concentration, by the first flow rate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully