SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Feb 24, 2022
app pub date -
Aug 18, 2020
filing date -
Aug 18, 2020
priority date (Note) -
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Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. The epitaxial region can include a first semiconductor layer and an n-type second semiconductor layer formed over the first semiconductor layer. A lattice constant of the first semiconductor layer can be greater than that of the second semiconductor layer.
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