Hydrophobic Low-Dielectric-Constant Film and Preparation Method Therefor
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United States of America Patent
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May 12, 2022
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May 14, 2020
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May 14, 2020
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Abstract
The present disclosure provides a hydrophobic low-dielectric-constant film and a preparation method therefor. The low-dielectric-constant film is formed from one or more fluorine-containing compounds A by means of a plasma enhanced chemical vapor deposition method, and the one or more fluorine-containing compounds comprise a compound having the general formula CxSiyOmHnF2x+2y−n+2 or CxSiyOmHnF2x+2y−n, x being an integer from 1 to 20, y being an integer from 0 to 8, m being an integer from 0 to 6, and n being 0, 3, 6, 7, 9, 10, 12, 13, 15, 16, 17 and 19. Thus, a nano-film having a low dielectric constant and good hydrophobicity is formed on the surface of a substrate.
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