ETCHANT COMPOSITION, AND METHOD FOR MANUFACTURING METAL PATTERN AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME

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United States of America

APP PUB NO 20220205110A1
SERIAL NO

17566427

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Abstract

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An etchant composition of an embodiment may etch a multi-layered film of titanium/copper and may include about 5 wt % to about 20 wt % of persulfate, about 0.1 wt % to about 5 wt % of phosphoric acid or phosphate, about 0.01 wt % to about 2 wt % of a carbonyl ring compound, about 0.01 wt % to about 1 wt % of a 3-nitrogen ring compound, about 0.1 wt % to about 2 wt % of a 4-nitrogen ring compound, about 0.1 wt % to about 0.9 wt % of a fluorine compound, about 0.1 wt % to about 0.5 wt % of hydrogen about 1 wt % to about 3 wt % of a zwitterionic compound, and sulfate, water which is included in an amount that makes the total weight of the entire composition about 100 wt %.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG DISPLAY CO LTDGYEONGGI-DO

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AHN, ILBAE Asan-si, KR 2 0
JANG, SEOKJUN Cheonan-si, KR 4 0
JEON, YANGIL Asan-si, KR 1 0
KIM, BONG-KYUN Hwaseong-si, KR 67 528
KIM, GYU-PO Incheon, KR 9 31
KIM, JINSUEK Hwaseong-si, KR 8 38
KIM, SANG-WOO Seongnam-si, KR 158 1538
KWON, CHANGWOO Seoul, KR 2 9
LEE, YONG-SU Cheonan-si, KR 40 265
PARK, JI-HUN Asan-si, KR 19 110
SHIM, SEUNGBO Asan-si, KR 57 76
SHIN, HYUN-CHEOL Incheon, KR 21 124

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