METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT AND CHEMICAL SOLUTION TO BE USED IN METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

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United States of America

APP PUB NO 20220205111A1
SERIAL NO

17644248

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Abstract

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A method for producing a semiconductor element and a chemical solution to be used in the method for producing a semiconductor element, the method including dry-etching or chemically-mechanically polishing a ruthenium-containing layer located as an uppermost layer of a substrate; and bringing a surface of the substrate into contact with a chemical solution thereby satisfactorily cleaning and removing a ruthenium residue formed on the surface of the substrate; and a chemical solution to be suitably used in the method for producing a semiconductor element.

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Patent Owner(s)

Patent OwnerAddress
TOKYO OHKA KOGYO CO LTD150 NAKAMARUKO NAKAHARA-KU KAWASAKI-SHI KANAGAWA 2110012 ?2110012

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
TAKAHASHI, Kazuhiro Kawasaki-shi, JP 419 3644
WADA, Yukihisa Kawasaki-shi, JP 61 377

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