LDMOS and fabricating method of the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11616139
APP PUB NO 20220271157A1
SERIAL NO

17224108

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Abstract

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An LDMOS includes a semiconductor substrate. A well is disposed within the semiconductor substrate. A body region is disposed within the well. A first gate electrode is disposed on the semiconductor substrate. A source electrode is disposed at one side of the first gate electrode. The source electrode includes a source contact area and numerous vias. The vias connect to the source contact area. The vias extend into the semiconductor substrate. A first drain electrode is disposed at another side of the first gate electrode and is opposed to the source electrode.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Chung-Yen Hsinchu County, TW 4 4
Kuo, Chen-An Taoyuan, TW 10 5
Lai, Po-Chun Taoyuan, TW 18 45
Teng, Ching-Wei Taoyuan, TW 4 2

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